Presentation | 2000/10/19 Growth process of Ge film on Si substrates and Si/Ge superlattices by ion beam sputtering Yukihiro Takahashi, Masafumi Kaimori, Kimihiro Sasaki, Tomonobu Hata, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have been growing Si/Ge strained-layer superlattices by ion beam sputtering. It is known that Ge grown on Si grows in a layer-by-layer mode for only 6 mono-layers, after which 3D island was formed by the lattice relaxation. It causes deterioration of the surface morphology. We observed Ge film surface morphology to investigate the critical thickness of Ge. As a result, we found that the critical thickness at 500℃ and 600℃ were 0.8nm and 0.5 nm respectively. Based on the result, we prepared Si/Ge superlattices with Ge layer under critical thickness so that flat surface mophology could be obtained. On the other hand, we can observe only weak satellite peaks in XRD, because of Ge mixing. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ion beam sputtering / critical thickness / Si/Ge superlattices / satellite peak |
Paper # | CPM2000-117 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 2000/10/19(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth process of Ge film on Si substrates and Si/Ge superlattices by ion beam sputtering |
Sub Title (in English) | |
Keyword(1) | ion beam sputtering |
Keyword(2) | critical thickness |
Keyword(3) | Si/Ge superlattices |
Keyword(4) | satellite peak |
1st Author's Name | Yukihiro Takahashi |
1st Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University() |
2nd Author's Name | Masafumi Kaimori |
2nd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
3rd Author's Name | Kimihiro Sasaki |
3rd Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
4th Author's Name | Tomonobu Hata |
4th Author's Affiliation | Graduate School of Natural Science & Technology Kanazawa University |
Date | 2000/10/19 |
Paper # | CPM2000-117 |
Volume (vol) | vol.100 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |