Presentation 2000/10/19
Growth process of Ge film on Si substrates and Si/Ge superlattices by ion beam sputtering
Yukihiro Takahashi, Masafumi Kaimori, Kimihiro Sasaki, Tomonobu Hata,
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Abstract(in English) We have been growing Si/Ge strained-layer superlattices by ion beam sputtering. It is known that Ge grown on Si grows in a layer-by-layer mode for only 6 mono-layers, after which 3D island was formed by the lattice relaxation. It causes deterioration of the surface morphology. We observed Ge film surface morphology to investigate the critical thickness of Ge. As a result, we found that the critical thickness at 500℃ and 600℃ were 0.8nm and 0.5 nm respectively. Based on the result, we prepared Si/Ge superlattices with Ge layer under critical thickness so that flat surface mophology could be obtained. On the other hand, we can observe only weak satellite peaks in XRD, because of Ge mixing.
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Keyword(in English) ion beam sputtering / critical thickness / Si/Ge superlattices / satellite peak
Paper # CPM2000-117
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Committee CPM
Conference Date 2000/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth process of Ge film on Si substrates and Si/Ge superlattices by ion beam sputtering
Sub Title (in English)
Keyword(1) ion beam sputtering
Keyword(2) critical thickness
Keyword(3) Si/Ge superlattices
Keyword(4) satellite peak
1st Author's Name Yukihiro Takahashi
1st Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University()
2nd Author's Name Masafumi Kaimori
2nd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
3rd Author's Name Kimihiro Sasaki
3rd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
4th Author's Name Tomonobu Hata
4th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
Date 2000/10/19
Paper # CPM2000-117
Volume (vol) vol.100
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue