Presentation	2000/10/12 Fabrication of AlGaN/GaN HEMTs with buried p-layers Kenji Shiojima, Tetsuya Suemitsu, Naoteru Shigekawa,
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Abstract(in English)	We have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 2-μm-gate device showed good pinch-off characteristics, g_m of 55 mS/mm, and breakdown voltage of 70～90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. The maximum f_T of 5.5 GHz was obtained. These results indicate the potential of p-layer insertion into GaN-based FETs.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	GaN / HEMT / buried p-layer / carrier confinement
Paper #	ED2000-167,CPM2000-106
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Conference Information
Committee	CPM
Conference Date	2000/10/12(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Fabrication of AlGaN/GaN HEMTs with buried p-layers
Sub Title (in English)
Keyword(1)	GaN
Keyword(2)	HEMT
Keyword(3)	buried p-layer
Keyword(4)	carrier confinement
1st Author's Name	Kenji Shiojima
1st Author's Affiliation	NTT Photonics Laboratories()
2nd Author's Name	Tetsuya Suemitsu
2nd Author's Affiliation	NTT Photonics Laboratories
3rd Author's Name	Naoteru Shigekawa
3rd Author's Affiliation	NTT Science & Core Technology Laboratories
Date	2000/10/12
Paper #	ED2000-167,CPM2000-106
Volume (vol)	vol.100
Number (no)	371
Page	pp.pp.-
#Pages	6
Date of Issue