| Presentation | 2000/8/17 CPM2000-78 Annealing Effect of ITO Thin Films Deposited at Low Substrate Temperature by Low Voltage Sputtering Technique Ryoma Ohki, Yoichi Hoshi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ITO thin films with a low resistivity deposited at room temperature in Ar, Kr, and Xe gas by using a low voltage sputtering technique at 100 V were annealed in air and in a vacuum, and the changes in structure and electrical properties of the films were investigated in detail. The film began to crystallize at a temperature above 150 ℃ and a remarkable crystal growth was observed at a temperature above 200 ℃, which led to a significant decrease in Hall mobility of the film. Carrier density increased by the annealing in a vacuum, while it decreased by the annealing in air at a temperature above 250 ℃. These results suggest that the crystallization causes a formation of a low mobility boundary layer at grain boundaries, and oxygen atoms were incorporated and emitted from the films by the annealing at a temperature above 250 ℃ in vacuum and in air, respectively, which resulted in a reduction and production of carriers in the films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | transparent conductive film / ITO / low voltage sputtering / annealing treatment / crystallization |
| Paper # | CPM2000-78 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/8/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CPM2000-78 Annealing Effect of ITO Thin Films Deposited at Low Substrate Temperature by Low Voltage Sputtering Technique |
| Sub Title (in English) | |
| Keyword(1) | transparent conductive film |
| Keyword(2) | ITO |
| Keyword(3) | low voltage sputtering |
| Keyword(4) | annealing treatment |
| Keyword(5) | crystallization |
| 1st Author's Name | Ryoma Ohki |
| 1st Author's Affiliation | Faculty of Engineering, Tokyo Institute of Polytechnics() |
| 2nd Author's Name | Yoichi Hoshi |
| 2nd Author's Affiliation | Faculty of Engineering, Tokyo Institute of Polytechnics |
| Date | 2000/8/17 |
| Paper # | CPM2000-78 |
| Volume (vol) | vol.100 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |