Presentation 1999/8/6
Electrical resistivity of Cu films deposited at a high pressure in the range of 1 Torr using gas-flow-sputtering
Kiyoshi ISHII, Yutaka NISHISAKA,
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Abstract(in English) Gas-flow-sputtering allows a high-rate sputter-deposition of films even at a high pressure in the range of 1 Torr. The discharge characteristics and deposition rate were investigated for the deposition of Cu films. The deposition rate was 250 A/min at 0.4 Torr. The electrical resistivity of the films depended on the sputtering pressure and the bias voltage of substrate. When the pressure was 1 Torr and the substrate bias was -60V, the resistivity was about three times of the value of bulk.
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Keyword(in English) sputtering method / sputtered film / gas-flow-sputtering / Cu film
Paper # CPM99-54
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Conference Information
Committee CPM
Conference Date 1999/8/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical resistivity of Cu films deposited at a high pressure in the range of 1 Torr using gas-flow-sputtering
Sub Title (in English)
Keyword(1) sputtering method
Keyword(2) sputtered film
Keyword(3) gas-flow-sputtering
Keyword(4) Cu film
1st Author's Name Kiyoshi ISHII
1st Author's Affiliation Faculty of Engineering, Utsunomiya University()
2nd Author's Name Yutaka NISHISAKA
2nd Author's Affiliation Faculty of Engineering, Utsunomiya University
Date 1999/8/6
Paper # CPM99-54
Volume (vol) vol.99
Number (no) 257
Page pp.pp.-
#Pages 6
Date of Issue