Presentation | 1999/8/6 Electrical resistivity of Cu films deposited at a high pressure in the range of 1 Torr using gas-flow-sputtering Kiyoshi ISHII, Yutaka NISHISAKA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Gas-flow-sputtering allows a high-rate sputter-deposition of films even at a high pressure in the range of 1 Torr. The discharge characteristics and deposition rate were investigated for the deposition of Cu films. The deposition rate was 250 A/min at 0.4 Torr. The electrical resistivity of the films depended on the sputtering pressure and the bias voltage of substrate. When the pressure was 1 Torr and the substrate bias was -60V, the resistivity was about three times of the value of bulk. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | sputtering method / sputtered film / gas-flow-sputtering / Cu film |
Paper # | CPM99-54 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1999/8/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical resistivity of Cu films deposited at a high pressure in the range of 1 Torr using gas-flow-sputtering |
Sub Title (in English) | |
Keyword(1) | sputtering method |
Keyword(2) | sputtered film |
Keyword(3) | gas-flow-sputtering |
Keyword(4) | Cu film |
1st Author's Name | Kiyoshi ISHII |
1st Author's Affiliation | Faculty of Engineering, Utsunomiya University() |
2nd Author's Name | Yutaka NISHISAKA |
2nd Author's Affiliation | Faculty of Engineering, Utsunomiya University |
Date | 1999/8/6 |
Paper # | CPM99-54 |
Volume (vol) | vol.99 |
Number (no) | 257 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |