| Presentation | 1999/8/6 Effect of carrier gas composition on GaN layer grown by MOCVD Y. Sasaki, K. 0htuka, K. Kuwahara, M. Sumiya, Y. Takano, S. Fuke, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN layers were grown on sapphire (0001) substrates using a two-step growth method by MOCVD. Effects of the carrier gas composition at annealing process and GaN growth process on grown GaN layers were studied. When buffer layers were annealed in N_2+NH_3, no cohesion of the buffer layer took p lace and a lot of small nuclei were formed on a sapphire substrate. When GaN layers were grown in N_2+NH_3 ambient, little cohesion of the buffer layer were observed and many cracks were formed, in contrast to the GaN growth in H_2+NH_3 ambient. It is suggested that both the behavior of cohesion and the density of growth nuclei affect the crystallinity and the residual strain of GaN layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOCVD / sapphire substrates / GaN buffer layer / residual strain |
| Paper # | CPM99-52 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 1999/8/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of carrier gas composition on GaN layer grown by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOCVD |
| Keyword(3) | sapphire substrates |
| Keyword(4) | GaN buffer layer |
| Keyword(5) | residual strain |
| 1st Author's Name | Y. Sasaki |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | K. 0htuka |
| 2nd Author's Affiliation | Research and Development Division, Sanken Electric Co.,Ltd. |
| 3rd Author's Name | K. Kuwahara |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 4th Author's Name | M. Sumiya |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 5th Author's Name | Y. Takano |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 6th Author's Name | S. Fuke |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| Date | 1999/8/6 |
| Paper # | CPM99-52 |
| Volume (vol) | vol.99 |
| Number (no) | 257 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |