| Presentation | 1999/8/6 STM Observation on Initial Oxidation of Si (111) Surface (2) Masahiro Miyao, Nobuhiro Horiguchi, Hiroyuki Kikuchi, Tetsu Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Initial oxidation of Si(111) surfaces were studied by STM and STS. The silicon oxide occures concurrently duriling the oxidation of Si. The oxidation of Si is strongly affected by the some reactive spaces contained in the oxigen. These spaces are come from the operation of ion pomp. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / Oxide layer / STS / STM / oxide formation mechanism / evapolation |
| Paper # | CPM99-51 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/8/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | STM Observation on Initial Oxidation of Si (111) Surface (2) |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | Oxide layer |
| Keyword(3) | STS |
| Keyword(4) | STM |
| Keyword(5) | oxide formation mechanism |
| Keyword(6) | evapolation |
| 1st Author's Name | Masahiro Miyao |
| 1st Author's Affiliation | Muroran Inst. Tech.() |
| 2nd Author's Name | Nobuhiro Horiguchi |
| 2nd Author's Affiliation | Muroran Inst. Tech. |
| 3rd Author's Name | Hiroyuki Kikuchi |
| 3rd Author's Affiliation | Muroran Inst. Tech. |
| 4th Author's Name | Tetsu Hasegawa |
| 4th Author's Affiliation | Muroran Inst. Tech. |
| Date | 1999/8/6 |
| Paper # | CPM99-51 |
| Volume (vol) | vol.99 |
| Number (no) | 257 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |