| Presentation | 1999/5/21 Growth of graded InGaAs layers on GaAs (100) by MOCVD M. Nishimura, Y. Shirakawa, K. Kuwahara, M. Sumiya, S. Fuke, Y. Takano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Layers of graded InGaAs on GaAs on GaAs (100) by metalorganic chemical vapor depotision have been investigated. The graded InGaAs layer has a residual strain because of lattice mismatch. We have conducted the thermal annealing before growth of a constant layer or the growth of a constant layer with In composition less than that of the top region of the graded layer. We measured the residual strain and found that the annealing was essential for the strain reduction. However, the annealing at the higher temperature or for the longer time damaged the surface and increased the threading dislocation in the top layer. The lowering of In composition of the top constant layers after the growth of the graded buffer layers reduced the residual strain in the top layers but no improvement in crystallinity was ovserved by lowering the ln composition of the top layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs / graded layers / anneal / strain / overshoot / MOCVD |
| Paper # | CPM99-24 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/5/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of graded InGaAs layers on GaAs (100) by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | InGaAs |
| Keyword(2) | graded layers |
| Keyword(3) | anneal |
| Keyword(4) | strain |
| Keyword(5) | overshoot |
| Keyword(6) | MOCVD |
| 1st Author's Name | M. Nishimura |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | Y. Shirakawa |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 3rd Author's Name | K. Kuwahara |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 4th Author's Name | M. Sumiya |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 5th Author's Name | S. Fuke |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 6th Author's Name | Y. Takano |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| Date | 1999/5/21 |
| Paper # | CPM99-24 |
| Volume (vol) | vol.99 |
| Number (no) | 66 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |