Presentation	1999/5/20 ZnO thin film prepared by laser ablation Yoshihito Hiroe, Akihiro Wakahara, Akira Yoshida,
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Abstract(in English)	Aluminum doped Zinc Oxide thin film was prepared by laser ablation. We obtained c-axis-oriented polycrystalline Zinc Oxide thin films deposited above 200[℃]. Correlation was seen between surface morphology and orientation. The resistivity of 8×10^<-4> [Ωcm] was obtained for a film deposited at room temperature, and the resistivity of the film deposited at 300[℃] was down to 1.3/10^<-4> [Ωcm]. The transmittance of Zinc Oxide thin film was increased with increasing substrate temperature and decreasing laser power.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Transparent conducting ZnO / Laser ablation
Paper #	CPM99-13
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Conference Information
Committee	CPM
Conference Date	1999/5/20(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	ZnO thin film prepared by laser ablation
Sub Title (in English)
Keyword(1)	Transparent conducting ZnO
Keyword(2)	Laser ablation
1st Author's Name	Yoshihito Hiroe
1st Author's Affiliation	Toyohashi University of Technology()
2nd Author's Name	Akihiro Wakahara
2nd Author's Affiliation	Toyohashi University of Technology
3rd Author's Name	Akira Yoshida
3rd Author's Affiliation	Toyohashi University of Technology
Date	1999/5/20
Paper #	CPM99-13
Volume (vol)	vol.99
Number (no)	65
Page	pp.pp.-
#Pages	6
Date of Issue