Presentation | 1999/5/20 Effect of impurity in CuInSe_2 by ion implantation T. Tanaka, A. Wakahara, T. Ohshima, H. Itoh, S. Okada, A. Yoshida, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently CuInSe_2 and related chalcopyrites have been received much attention as a potential candidate for solar cell with high efficiency, low cost, and excellent stability. In this study, we have investigated the effect of Mg on the characteristics of CuInSe_2 thin films using ion implantation technique, in order to clarify the doping effect by extrinsic dopants. After annealing, all implanted films showed n-type conduction, and the carrier concentration was increased with increasing the Mg concentration. Conseqently it was found that Mg act as a donor in CuInSe_2 with the ionization energy of about 53meV |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CuInSe_2 / doping / ion implantation / RF sputtering / chalcopyrite structure |
Paper # | CPM99-12 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 1999/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effect of impurity in CuInSe_2 by ion implantation |
Sub Title (in English) | |
Keyword(1) | CuInSe_2 |
Keyword(2) | doping |
Keyword(3) | ion implantation |
Keyword(4) | RF sputtering |
Keyword(5) | chalcopyrite structure |
1st Author's Name | T. Tanaka |
1st Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology() |
2nd Author's Name | A. Wakahara |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
3rd Author's Name | T. Ohshima |
3rd Author's Affiliation | Japan Atomic Energy Research Institute |
4th Author's Name | H. Itoh |
4th Author's Affiliation | Japan Atomic Energy Research Institute |
5th Author's Name | S. Okada |
5th Author's Affiliation | Japan Atomic Energy Research Institute |
6th Author's Name | A. Yoshida |
6th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
Date | 1999/5/20 |
Paper # | CPM99-12 |
Volume (vol) | vol.99 |
Number (no) | 65 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |