| Presentation | 1999/5/20 Composition control of SiC thin films deposition using HMDS T. Muramatsu, Y. Xu, T. Aoki, Y. Hatanaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiC thin films were deposited by plasma CVD method using hexamethyledisilane. It was found that when hydrogen was used for plasma gas, the cathode potential reduces because of flow of H+ ions toward the cathode. Cut off wave length of the deposited films sift toward higher wave length while increasing the amount of silane in HMDS. As a result, the film becomes yellowish, and the reason for this is under current study. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Plasma CVD / Hexamethyldisilane / Silane / Cathode potential / SiC film |
| Paper # | CPM99-11 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Composition control of SiC thin films deposition using HMDS |
| Sub Title (in English) | |
| Keyword(1) | Plasma CVD |
| Keyword(2) | Hexamethyldisilane |
| Keyword(3) | Silane |
| Keyword(4) | Cathode potential |
| Keyword(5) | SiC film |
| 1st Author's Name | T. Muramatsu |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Y. Xu |
| 2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
| 3rd Author's Name | T. Aoki |
| 3rd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
| 4th Author's Name | Y. Hatanaka |
| 4th Author's Affiliation | Research Institute of Electronics:Graduate School of Electronic Science and Technology, Shizuoka University |
| Date | 1999/5/20 |
| Paper # | CPM99-11 |
| Volume (vol) | vol.99 |
| Number (no) | 65 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |