| Presentation | 1999/5/20 「Invited Paper」 High Frequency Wide-Bandgap Semiconductor Devices H. Masato, Y. Ikeda, T. Matsuno, K. Nishii, K. Inoue, D. Ueda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated 0.3μm-gate FETs by using AlGaN/GaN hetero-structure grown on semi-insulating SiC Substrate. The device showed the maximum drain current of 740mA/mm, the peak transconductance of 150mS/mm and the high breakdown voltage of over 50V. Frequency dispersion was not observed at all. The cut-off frequency f_T of 22.2GHz and the maximum oscillation frequency fmax of 85.3GHz and the output power of 1W/mm at 1.9GHz were obtained for 100μm-gatewidth FET. These results indicate that, AlGaN/GaN HFET grown on SiC substrate is quite suitable for microwave or millimeter wave band power applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HFET / SiC Substrate / Power FET / Frequency Dispersion / Microwave |
| Paper # | CPM99-10 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 「Invited Paper」 High Frequency Wide-Bandgap Semiconductor Devices |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HFET |
| Keyword(2) | SiC Substrate |
| Keyword(3) | Power FET |
| Keyword(4) | Frequency Dispersion |
| Keyword(5) | Microwave |
| 1st Author's Name | H. Masato |
| 1st Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation() |
| 2nd Author's Name | Y. Ikeda |
| 2nd Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation |
| 3rd Author's Name | T. Matsuno |
| 3rd Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation |
| 4th Author's Name | K. Nishii |
| 4th Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation |
| 5th Author's Name | K. Inoue |
| 5th Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation |
| 6th Author's Name | D. Ueda |
| 6th Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Semiconductor Company Matsushita Electronics Corporation |
| Date | 1999/5/20 |
| Paper # | CPM99-10 |
| Volume (vol) | vol.99 |
| Number (no) | 65 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |