| Presentation | 1999/5/20 Heavily Boron-Doped Silicon Crystal Growth T. Taishi, T. Fukami, X. Huang, Keigo Hoshikawa, M. Kubota, T. Kajigaya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Boron segregation, concentration limit of boron for dislocation-free single crystal growth and reason for polycrystallization with heavily boron-doped silicon crystal growth were investigated. Silicon crystals were grown from heavily boron-doped silicon melt with initial boron concentrations ranging from 10^<18> to 10^<21> atoms/cm^3 by the CZ method. The effective and equilibrium segregation coefficient considerably decreased from 0.8 with increasing the boron concentration in the silicon melt. It was found that concentration limit of boron for dislocation-free single crystal growth was about 3×10^<20> atoms/cm^3. The reason for the polycrystallization in the heavily boron-doped silicon crystal growth is possibly the constitutional supercooling. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CZ silicon crystal growth / heavy boron doping / segregation coefficient / boron concentration / polycrystallization / constitutional supercooling |
| Paper # | CPM99-9 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heavily Boron-Doped Silicon Crystal Growth |
| Sub Title (in English) | |
| Keyword(1) | CZ silicon crystal growth |
| Keyword(2) | heavy boron doping |
| Keyword(3) | segregation coefficient |
| Keyword(4) | boron concentration |
| Keyword(5) | polycrystallization |
| Keyword(6) | constitutional supercooling |
| 1st Author's Name | T. Taishi |
| 1st Author's Affiliation | Faculty of Engineering, Shinshu University() |
| 2nd Author's Name | T. Fukami |
| 2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 3rd Author's Name | X. Huang |
| 3rd Author's Affiliation | Faculty of Education, Shinshu University |
| 4th Author's Name | Keigo Hoshikawa |
| 4th Author's Affiliation | Faculty of Education, Shinshu University |
| 5th Author's Name | M. Kubota |
| 5th Author's Affiliation | Sumitomo Metal Mining Co., Ltd. |
| 6th Author's Name | T. Kajigaya |
| 6th Author's Affiliation | Sumitomo Metal Mining Co., Ltd. |
| Date | 1999/5/20 |
| Paper # | CPM99-9 |
| Volume (vol) | vol.99 |
| Number (no) | 65 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |