Presentation 1999/5/20
Buried growth of Si on SiO_2 stripe patterned substrate by ECR plasma CVD
Yukio Yoshida, Yukihiro Takahashi, Kimihiro Sasaki,
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Abstract(in English) Si thin films were grown selectivilt to SiO_2 stripe patterned substrate using ECR Plasma CVD. In this process etching effect by hydrogen radicals during depositing film plays a key role. We found the possibility of selective growth at H_2 flow rate of 200sccm at 225℃. But good crystallinity was not obtained because of lowness of substrate temperature. To improve the crystalline quality of the boundary between Si substrate and Si thin films. After we performed high temperature epitaxial growth of Si thin films, we tried to performed selective growth on SiO_2 pattened substrate. This method is called etch back selective growth. We found it possible to perform the etch back selective growth up to 300℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ECR plasma CVD / selective growth / etching / etch back selective growth
Paper # CPM99-8
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Committee CPM
Conference Date 1999/5/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Buried growth of Si on SiO_2 stripe patterned substrate by ECR plasma CVD
Sub Title (in English)
Keyword(1) ECR plasma CVD
Keyword(2) selective growth
Keyword(3) etching
Keyword(4) etch back selective growth
1st Author's Name Yukio Yoshida
1st Author's Affiliation Kanazawa University, Factory of Engineering()
2nd Author's Name Yukihiro Takahashi
2nd Author's Affiliation Kanazawa University, Factory of Engineering
3rd Author's Name Kimihiro Sasaki
3rd Author's Affiliation Kanazawa University, Factory of Engineering
Date 1999/5/20
Paper # CPM99-8
Volume (vol) vol.99
Number (no) 65
Page pp.pp.-
#Pages 6
Date of Issue