Presentation | 1999/5/20 Buried growth of Si on SiO_2 stripe patterned substrate by ECR plasma CVD Yukio Yoshida, Yukihiro Takahashi, Kimihiro Sasaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Si thin films were grown selectivilt to SiO_2 stripe patterned substrate using ECR Plasma CVD. In this process etching effect by hydrogen radicals during depositing film plays a key role. We found the possibility of selective growth at H_2 flow rate of 200sccm at 225℃. But good crystallinity was not obtained because of lowness of substrate temperature. To improve the crystalline quality of the boundary between Si substrate and Si thin films. After we performed high temperature epitaxial growth of Si thin films, we tried to performed selective growth on SiO_2 pattened substrate. This method is called etch back selective growth. We found it possible to perform the etch back selective growth up to 300℃. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ECR plasma CVD / selective growth / etching / etch back selective growth |
Paper # | CPM99-8 |
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Committee | CPM |
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Conference Date | 1999/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Buried growth of Si on SiO_2 stripe patterned substrate by ECR plasma CVD |
Sub Title (in English) | |
Keyword(1) | ECR plasma CVD |
Keyword(2) | selective growth |
Keyword(3) | etching |
Keyword(4) | etch back selective growth |
1st Author's Name | Yukio Yoshida |
1st Author's Affiliation | Kanazawa University, Factory of Engineering() |
2nd Author's Name | Yukihiro Takahashi |
2nd Author's Affiliation | Kanazawa University, Factory of Engineering |
3rd Author's Name | Kimihiro Sasaki |
3rd Author's Affiliation | Kanazawa University, Factory of Engineering |
Date | 1999/5/20 |
Paper # | CPM99-8 |
Volume (vol) | vol.99 |
Number (no) | 65 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |