Presentation | 1999/5/20 Development of High Efficiency Silicon RF - Power MOSFET Y. Kusakari, Masatoshi M, T. Fujioka, K. Katsueda, Y. Matsunaga, I. Kohjiro, K. Onozawa, T. Sato, I. Yoshida, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A high efficiency silicon RF-power MOSFET has been developed for use in power amplifiers of 900-MHz band GSM handset phones with 3. 6V supply voltage. To increase power efficiency, we used a CMOS LSI process technology with 0.45-μm gate length. Features of this MOSFET include a 6.9-Ωmm on-state resistance, 13-V drain breakdown voltage and 11-GHz cut-off freqency. As a result, we attained RF characteristics of 1.8 W-output power, 10-dB power gain, and 60% power-added efficiency. A RF power amplifier module using this MOSFET chip achieves 4.0-W output power and 50-% total efficiency. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GSM / RF power module / power MOSFET / Scale down / power efficiency |
Paper # | CPM99-7 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 1999/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Development of High Efficiency Silicon RF - Power MOSFET |
Sub Title (in English) | |
Keyword(1) | GSM |
Keyword(2) | RF power module |
Keyword(3) | power MOSFET |
Keyword(4) | Scale down |
Keyword(5) | power efficiency |
1st Author's Name | Y. Kusakari |
1st Author's Affiliation | Hitachi ULSI systems Co., Ltd.() |
2nd Author's Name | Masatoshi M |
2nd Author's Affiliation | Hitachi, Ltd. |
3rd Author's Name | T. Fujioka |
3rd Author's Affiliation | Hitachi, Ltd. |
4th Author's Name | K. Katsueda |
4th Author's Affiliation | Hitachi, Ltd. |
5th Author's Name | Y. Matsunaga |
5th Author's Affiliation | Hitachi, Ltd. |
6th Author's Name | I. Kohjiro |
6th Author's Affiliation | Hitachi, Ltd. |
7th Author's Name | K. Onozawa |
7th Author's Affiliation | Hitachi, Ltd. |
8th Author's Name | T. Sato |
8th Author's Affiliation | Hitachi Tohbu Semiconductor, Ltd. |
9th Author's Name | I. Yoshida |
9th Author's Affiliation | Hitachi, Ltd. |
Date | 1999/5/20 |
Paper # | CPM99-7 |
Volume (vol) | vol.99 |
Number (no) | 65 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |