| Presentation | 1999/5/20 Thin-film SOI Power MOSFETs Satoshi Matsumoto, Yasushi Hiraoka, Toshiaki Yachi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A thin-film SOI power MOSFET has been attractive for high-frequency applications because its parasitic capacitance is much lower than that fabricated on the conventional bulk Si substrate. This paper describes the device characteristics of the thin-film SOI power MOSFET for high-frequency switching and radio frequency applications. This.paper also describe the problems of the thin-film SOI power MOSFET and countermeasures for their problems. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / Quasi-SOI / Switching devices / Radio frequency power MOSFET |
| Paper # | CPM99-6 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thin-film SOI Power MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | Quasi-SOI |
| Keyword(3) | Switching devices |
| Keyword(4) | Radio frequency power MOSFET |
| 1st Author's Name | Satoshi Matsumoto |
| 1st Author's Affiliation | NTT Telecommunications Energy Laboratories() |
| 2nd Author's Name | Yasushi Hiraoka |
| 2nd Author's Affiliation | NTT Telecommunications Energy Laboratories |
| 3rd Author's Name | Toshiaki Yachi |
| 3rd Author's Affiliation | NTT Telecommunications Energy Laboratories |
| Date | 1999/5/20 |
| Paper # | CPM99-6 |
| Volume (vol) | vol.99 |
| Number (no) | 65 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |