Presentation 1999/5/20
Identification of MOS Oxide Defect Location With A Spatial Resolution Less Than 0.1μm Using Photoemission Microscope
Takashi Ohzone, Masae Yuzaki, Toshihiro Matsuda, Etsumasa Kameda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The maximum photoemission position corresponding to the oxide defect was determined in a spatial resolution less than 0.1μm by a combination of an improved photoemission microscope with a magnification of 500x and a test structure of MOS capacitors which had a periodic X-Y matrix pattern to define the precise oxide-defect location. The field-oxide islands, which had photoemission spots from the oxide defects, distributed at random. The LOCOS edge corresponding to the intensity dent of the reflected light image was located at about +0.3μm from the gate-oxide edge. The oxide-defects were located in +0.4~-0.1μm from the LOCOS edge.
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Keyword(in English) MOS capacitor / MOSFET LOCOS isolation / oxide defect / oxide reliability photoemission microscope
Paper # CPM99-5
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Committee CPM
Conference Date 1999/5/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Identification of MOS Oxide Defect Location With A Spatial Resolution Less Than 0.1μm Using Photoemission Microscope
Sub Title (in English)
Keyword(1) MOS capacitor
Keyword(2) MOSFET LOCOS isolation
Keyword(3) oxide defect
Keyword(4) oxide reliability photoemission microscope
1st Author's Name Takashi Ohzone
1st Author's Affiliation Department of Electronics and Informatics, Toyama Prefectural University()
2nd Author's Name Masae Yuzaki
2nd Author's Affiliation Department of Electronics and Informatics, Toyama Prefectural University
3rd Author's Name Toshihiro Matsuda
3rd Author's Affiliation Machinery and Electronics Laboratory, Toyama Industrial Technology Center
4th Author's Name Etsumasa Kameda
4th Author's Affiliation Department of Electrical Engineering, Toyama National College of Technology
Date 1999/5/20
Paper # CPM99-5
Volume (vol) vol.99
Number (no) 65
Page pp.pp.-
#Pages 7
Date of Issue