Presentation 1999/5/20
Effects of Inhomogeneous Carrier Depth Profiles on Deep-Level Transient Spectroscopy Measurernents
A. Ito, Y. Tokuda,
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Abstract(in English) Simulation of a temperature-scan capacitance deep-level transient spectroscopy (DLTS) spectrum was carried out with numerical calculation of the Poisson's equations which depend on measurement temperature (T), time (t) and position (x). When it is assumed that carrier concentration change abruptly in depth and one electron trap exits, the calculated DLTS spectrum shows two peaks. Frorn the Arrhenious plot of the ghost DLTS peak, the values of carrier emission activation energy and its capture cross section are 2.7 eV and 4.6x10^<41>cm^2, respectively. It is necessary to pay attention to evaluate a point defect in a sarnple whose carrier concentration abruptly changes with the depth.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DLTS / inhomogeneous carrier distribution / point defects / simulation
Paper # CPM99-4
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Conference Information
Committee CPM
Conference Date 1999/5/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of Inhomogeneous Carrier Depth Profiles on Deep-Level Transient Spectroscopy Measurernents
Sub Title (in English)
Keyword(1) DLTS
Keyword(2) inhomogeneous carrier distribution
Keyword(3) point defects
Keyword(4) simulation
1st Author's Name A. Ito
1st Author's Affiliation Suzuka National College of Technology()
2nd Author's Name Y. Tokuda
2nd Author's Affiliation Aichi Institute of Technology
Date 1999/5/20
Paper # CPM99-4
Volume (vol) vol.99
Number (no) 65
Page pp.pp.-
#Pages 6
Date of Issue