Presentation | 1999/5/20 Effects of Inhomogeneous Carrier Depth Profiles on Deep-Level Transient Spectroscopy Measurernents A. Ito, Y. Tokuda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Simulation of a temperature-scan capacitance deep-level transient spectroscopy (DLTS) spectrum was carried out with numerical calculation of the Poisson's equations which depend on measurement temperature (T), time (t) and position (x). When it is assumed that carrier concentration change abruptly in depth and one electron trap exits, the calculated DLTS spectrum shows two peaks. Frorn the Arrhenious plot of the ghost DLTS peak, the values of carrier emission activation energy and its capture cross section are 2.7 eV and 4.6x10^<41>cm^2, respectively. It is necessary to pay attention to evaluate a point defect in a sarnple whose carrier concentration abruptly changes with the depth. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | DLTS / inhomogeneous carrier distribution / point defects / simulation |
Paper # | CPM99-4 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1999/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effects of Inhomogeneous Carrier Depth Profiles on Deep-Level Transient Spectroscopy Measurernents |
Sub Title (in English) | |
Keyword(1) | DLTS |
Keyword(2) | inhomogeneous carrier distribution |
Keyword(3) | point defects |
Keyword(4) | simulation |
1st Author's Name | A. Ito |
1st Author's Affiliation | Suzuka National College of Technology() |
2nd Author's Name | Y. Tokuda |
2nd Author's Affiliation | Aichi Institute of Technology |
Date | 1999/5/20 |
Paper # | CPM99-4 |
Volume (vol) | vol.99 |
Number (no) | 65 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |