Presentation 1999/5/20
Carrier profiles in bonded SOI wafers obtained by the spreading-resistance measurerment
M. ICHIMURA, T. OHASHI, E. ARAI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The spreading resistance (SR) measurement is applied to p-type bonded silicon-on-insulator (SOI) wafers, and effects of fixed charge in the buried oxide on the SR carrier profiles are theoretically investigated. The measured carrier concentration decreases rapidly near the interface, goes through a minimum, and then increases gradually with decreasing distance to the interface. The position of the minimum depends on impurity concentration in the body of the SOI layer. These features are reproduced by the calculation considering the fixed charge in the oxide and the surface states.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / spreading resistance measurement / buried oxide / surface state
Paper # CPM99-3
Date of Issue

Conference Information
Committee CPM
Conference Date 1999/5/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Carrier profiles in bonded SOI wafers obtained by the spreading-resistance measurerment
Sub Title (in English)
Keyword(1) SOI
Keyword(2) spreading resistance measurement
Keyword(3) buried oxide
Keyword(4) surface state
1st Author's Name M. ICHIMURA
1st Author's Affiliation Center for Cooperative Research, Nagoya Institute of Technology()
2nd Author's Name T. OHASHI
2nd Author's Affiliation DepartInent of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name E. ARAI
3rd Author's Affiliation DepartInent of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1999/5/20
Paper # CPM99-3
Volume (vol) vol.99
Number (no) 65
Page pp.pp.-
#Pages 8
Date of Issue