Presentation | 1999/5/20 Carrier profiles in bonded SOI wafers obtained by the spreading-resistance measurerment M. ICHIMURA, T. OHASHI, E. ARAI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The spreading resistance (SR) measurement is applied to p-type bonded silicon-on-insulator (SOI) wafers, and effects of fixed charge in the buried oxide on the SR carrier profiles are theoretically investigated. The measured carrier concentration decreases rapidly near the interface, goes through a minimum, and then increases gradually with decreasing distance to the interface. The position of the minimum depends on impurity concentration in the body of the SOI layer. These features are reproduced by the calculation considering the fixed charge in the oxide and the surface states. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI / spreading resistance measurement / buried oxide / surface state |
Paper # | CPM99-3 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1999/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Carrier profiles in bonded SOI wafers obtained by the spreading-resistance measurerment |
Sub Title (in English) | |
Keyword(1) | SOI |
Keyword(2) | spreading resistance measurement |
Keyword(3) | buried oxide |
Keyword(4) | surface state |
1st Author's Name | M. ICHIMURA |
1st Author's Affiliation | Center for Cooperative Research, Nagoya Institute of Technology() |
2nd Author's Name | T. OHASHI |
2nd Author's Affiliation | DepartInent of Electrical and Computer Engineering, Nagoya Institute of Technology |
3rd Author's Name | E. ARAI |
3rd Author's Affiliation | DepartInent of Electrical and Computer Engineering, Nagoya Institute of Technology |
Date | 1999/5/20 |
Paper # | CPM99-3 |
Volume (vol) | vol.99 |
Number (no) | 65 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |