| Presentation | 1998/11/6 Low resistance Ta/Ti Ohmic contacts for p-type GaN Masaaki Suzuki, Toshiyuki Kawakami, Tomoyuki Arai, Setsuko Kobayashi, Yasuo Koide, Masanori Murakami, Toshiya Uemura, Naoki Shibata, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Although extensive efforts have continued to develop Ohmic contacts for p-type GaN which have the specific contact resistance(ρ_c)lower than that(ρ_c～10^<-2>Ω-cm^2)of the conventional Ni/Au contacts, no breakthrough has been reported in open interatures. We demonstrated that bilayered Ta/Ti contacts have the ρ_c value of around 3 x 10^<-5>Ω-cm^2 for p-type GaN with hole concentration of 7 x 10^<17> cm^<-3>. This contact has the resiatance low enough to manufacture the blue laser diodes, but deterioration of the ρ_c value during room temperature storage is the key issue. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-type GaN / Ohmic contact / Ta/Ti contacts / contact resistance / deterioration of the ρ_c value |
| Paper # | ED98-145,CPM98-148 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low resistance Ta/Ti Ohmic contacts for p-type GaN |
| Sub Title (in English) | |
| Keyword(1) | p-type GaN |
| Keyword(2) | Ohmic contact |
| Keyword(3) | Ta/Ti contacts |
| Keyword(4) | contact resistance |
| Keyword(5) | deterioration of the ρ_c value |
| 1st Author's Name | Masaaki Suzuki |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Kyoto University() |
| 2nd Author's Name | Toshiyuki Kawakami |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Kyoto University |
| 3rd Author's Name | Tomoyuki Arai |
| 3rd Author's Affiliation | Department of Materials Science and Engineering, Kyoto University |
| 4th Author's Name | Setsuko Kobayashi |
| 4th Author's Affiliation | Department of Materials Science and Engineering, Kyoto University |
| 5th Author's Name | Yasuo Koide |
| 5th Author's Affiliation | Department of Materials Science and Engineering, Kyoto University |
| 6th Author's Name | Masanori Murakami |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Kyoto University |
| 7th Author's Name | Toshiya Uemura |
| 7th Author's Affiliation | Toyoda Gosei Co.Ltd., Optoelectronics Department |
| 8th Author's Name | Naoki Shibata |
| 8th Author's Affiliation | Toyoda Gosei Co.Ltd., Optoelectronics Department |
| Date | 1998/11/6 |
| Paper # | ED98-145,CPM98-148 |
| Volume (vol) | vol.98 |
| Number (no) | 386 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |