| Presentation | 1998/11/6 Strain and electrical properties of AlGaN/GaN grown on sapphire H. ISHIKAWA, K. NAKAMURA, T. EGAWA, T. JIMBO, M. UMENO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated AlGaN/GaN single-hetero structures on sapphire substrate and measured the lattice constant by X-ray analyses. GaN was under the biaxial compressive stress due to the difference of thermal expansion coefficient between GaN and sapphire substrate. When thin AlGaN was grown on such a strained GaN, AlGaN was 1)under the biaxial compressive stress below the AlN molar fraction of 0.1, 2)under stress-free with the AlN molar fraction of 0.1 and 3)under the biaxial tensile stress above the AlN molar fraction of 0.1. As the sign of the stress inverts, the strain-induced piezoelectric field inverts at the AlN molar fraction of 0.1. We also measured the sheet carrier concentration and the Hall mobility by Hall measurement. The sheet carrier concentration was increased with increasing in the AlN molar fraction at 77K. The high mobility was obtained with the AlN molar fraction of 0.064 at 77K. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / MOCVD / strain / piezoelectric field / two dimensional electron gas |
| Paper # | ED98-144,CPM98-147 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Strain and electrical properties of AlGaN/GaN grown on sapphire |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | MOCVD |
| Keyword(4) | strain |
| Keyword(5) | piezoelectric field |
| Keyword(6) | two dimensional electron gas |
| 1st Author's Name | H. ISHIKAWA |
| 1st Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology() |
| 2nd Author's Name | K. NAKAMURA |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | T. EGAWA |
| 3rd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 4th Author's Name | T. JIMBO |
| 4th Author's Affiliation | Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology |
| 5th Author's Name | M. UMENO |
| 5th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology:Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 1998/11/6 |
| Paper # | ED98-144,CPM98-147 |
| Volume (vol) | vol.98 |
| Number (no) | 386 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |