| Presentation | 1998/11/6 RF-Molecular Beam Epitaxial high-speed Growth of GaN with GaN buffer layer grown by Migration Enhanced Epitaxy Daisuke SUGIHARA, Akihiko KIKUCHI, Kazuhide KUSAKABE, Kouichi KUSHI, Hajime SASAMOTO, Shinichi NAKAMURA, Katsumi KISHINO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN was grown by migration enhanced epitaxy(MEE)using molecular beam epitaxy(MBE)with rf-radical nitrogen source. We observed pit free smooth surface morphologies of MEE GaN by scanning electron microscope(SEM). 3.5μm thick GaN : Si layer was grown on MEE GaN layer by standard MBE with a high growth rate of 1.2μm/hr. The carrier density and mobility at room temperature were 1.2×10^<17>cm^<-3> and 372cm^2/Vs, respectively. Sharp photoluminescence(PL)spectrum without broad emission from 550nm to 580nm was observed at 15K. We also achieved relatively high growth rate of 2.6μm/hr by standard RF-MBE. The carrier density of Si doped n typr GaN was controlled from 4.9×10^15cm^-3 to 5.3×10^<20>cm^<-3>. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / RF-MBE / Migration Enhanced Epitaxy / High growth rate / Photoluminscence |
| Paper # | ED98-137,CPM98-140 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | RF-Molecular Beam Epitaxial high-speed Growth of GaN with GaN buffer layer grown by Migration Enhanced Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | RF-MBE |
| Keyword(3) | Migration Enhanced Epitaxy |
| Keyword(4) | High growth rate |
| Keyword(5) | Photoluminscence |
| 1st Author's Name | Daisuke SUGIHARA |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University() |
| 2nd Author's Name | Akihiko KIKUCHI |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 3rd Author's Name | Kazuhide KUSAKABE |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 4th Author's Name | Kouichi KUSHI |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 5th Author's Name | Hajime SASAMOTO |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 6th Author's Name | Shinichi NAKAMURA |
| 6th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 7th Author's Name | Katsumi KISHINO |
| 7th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| Date | 1998/11/6 |
| Paper # | ED98-137,CPM98-140 |
| Volume (vol) | vol.98 |
| Number (no) | 386 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |