| Presentation | 1998/11/5 A 25-nm-pitch buried hetrostructure and a 80-nm-pitch electrode for hot electron interference device A. Kokubo, T. Hattori, M. Kurahashi, H. Oguchi, M. Suhara, Y. Miyamoto, K. Furuya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize electron wave device, observation of the hot electron interference phenomena is important. We report grating experiment of hot electron in a semiconductor under magnetic field. The fabricated device consists of a 40-nm-pitch grating and a 200-nm-pitch electrode. The energy of hot electron is of the order of 100meV. However, the measured current could not shown clear hot electron interference phenomena. We study a structure that makes the observation of the hot electron interference phenomena simply. We reported a fabrication of a 25-nm-pitch GaInAs/InP buried heterostructure with Calixarene and an 80-nm-pitch electrode with 2-Layer resist consisted of PMMA and C60 incorporated ZEP-520, as a necessary fine structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electron wave interference / hot electron / electron beem lithography / GaInAs/InP buried hetrostructure / fine electrode |
| Paper # | ED98-132,CPM98-135 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 25-nm-pitch buried hetrostructure and a 80-nm-pitch electrode for hot electron interference device |
| Sub Title (in English) | |
| Keyword(1) | electron wave interference |
| Keyword(2) | hot electron |
| Keyword(3) | electron beem lithography |
| Keyword(4) | GaInAs/InP buried hetrostructure |
| Keyword(5) | fine electrode |
| 1st Author's Name | A. Kokubo |
| 1st Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | T. Hattori |
| 2nd Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | M. Kurahashi |
| 3rd Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 4th Author's Name | H. Oguchi |
| 4th Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 5th Author's Name | M. Suhara |
| 5th Author's Affiliation | Reserch Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Y. Miyamoto |
| 6th Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 7th Author's Name | K. Furuya |
| 7th Author's Affiliation | Deperartment of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| Date | 1998/11/5 |
| Paper # | ED98-132,CPM98-135 |
| Volume (vol) | vol.98 |
| Number (no) | 385 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |