Presentation | 1998/11/5 Selective MOMBE growth and its application to waveguide integrated lasers H. Kizuki, R. Gibis, R. Kaiser, H. Kunzel, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Selective metalorganic molecular beam epitaxial(MOMBE)regrowth of InP/GaInAsP passive optical waveguide was studied to achieve butt coupling to the 1.55/1.3 μm emitting lasers. In order to extract the benefits of MOMBE technique, the substrate temperature was kept as low as 485℃ during regrowth which is suitable for suppressing the degradation of the laser performance and its reliability. In this restriction, iron doping into InP and GaInAsP, thermal cleaning procedure prior to regrowth, and growth features on RIE mesaetched laser structure were mainly investigated. The high quality butt coupling of passive waveguide on Fabry-Perot lasers was successfully demonstrated. An increase of the threshold current for 980 μm long passive waveguide integrated laser was only 25 percent as compared to the laser without an external waveguide. Selective MOMBE growth is confirmed to be promising for fabricating photonic integrated circuits. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | waveguide integrated lasers / MOMBE / selective growth / butt coupling / photonic integrated circuits |
Paper # | ED98-131,CPM98-134 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1998/11/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Selective MOMBE growth and its application to waveguide integrated lasers |
Sub Title (in English) | |
Keyword(1) | waveguide integrated lasers |
Keyword(2) | MOMBE |
Keyword(3) | selective growth |
Keyword(4) | butt coupling |
Keyword(5) | photonic integrated circuits |
1st Author's Name | H. Kizuki |
1st Author's Affiliation | High Frequency & Oprical Semiconductor Div.Mitsibishi Electric Corp.:Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH() |
2nd Author's Name | R. Gibis |
2nd Author's Affiliation | Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH |
3rd Author's Name | R. Kaiser |
3rd Author's Affiliation | Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH |
4th Author's Name | H. Kunzel |
4th Author's Affiliation | Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH |
Date | 1998/11/5 |
Paper # | ED98-131,CPM98-134 |
Volume (vol) | vol.98 |
Number (no) | 385 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |