| Presentation | 1998/11/5 HJFET Structure with Thick Strained InAs Channel : Beyond the Critical Thickness T. Nakayama, H. Miyamoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We successfully realized a modulation-doped structure on InP substrate with a thick strained InAs channel, the thickness of which was two times thicker than the previously reported critical thickness. In our structure, an AlAs layer was inserted between an InAlAs spacer layer and the thick strained InAs channel to prevent two-dimensional to three-dimensional transition occurred at InAlAs/InAs heterointerface. Using a thick(7nm)strained InAs layer as a channel, we simultaneously achieved high electron mobility of 18,500cm^2/Vs and high sheet carrier density of 3.13x10^<12>cm^<-2> in the modulation doped structure on InP substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs / strained layer / critical thickness / mobility / MBE |
| Paper # | ED98-130,CPM98-133 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | HJFET Structure with Thick Strained InAs Channel : Beyond the Critical Thickness |
| Sub Title (in English) | |
| Keyword(1) | InAs |
| Keyword(2) | strained layer |
| Keyword(3) | critical thickness |
| Keyword(4) | mobility |
| Keyword(5) | MBE |
| 1st Author's Name | T. Nakayama |
| 1st Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation() |
| 2nd Author's Name | H. Miyamoto |
| 2nd Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
| Date | 1998/11/5 |
| Paper # | ED98-130,CPM98-133 |
| Volume (vol) | vol.98 |
| Number (no) | 385 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |