Presentation 1998/11/5
Crystal structure and optical properties of CdS films grown by photochemical deposition
M. ICHIMURA, F. GOTO, E. ARAI,
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Abstract(in English) CdS thin films grown by photochemical deposition(PCD)are characterized by X-ray diffraction(XRD), Raman spectroscopy, photoluminescence and optical transmission measurements. The as-deposited film is dominantly zincblende cubic. The cubic phase remains dominant until the annealing temperature T becomes higher than 440℃. After the annealing at 450℃, the structure turns to hexagonal and the XRD peak width decreases. The near-band-edge liminescence is observed for T>450℃. The bandgap is decreased by annealing at T<440℃ and then then abruptly increased by the annealing at 450℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CdS / photochemical deposition / solar cell / annealing / phase transition
Paper # ED98-128,CPM98-131
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Committee CPM
Conference Date 1998/11/5(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Crystal structure and optical properties of CdS films grown by photochemical deposition
Sub Title (in English)
Keyword(1) CdS
Keyword(2) photochemical deposition
Keyword(3) solar cell
Keyword(4) annealing
Keyword(5) phase transition
1st Author's Name M. ICHIMURA
1st Author's Affiliation center for Cooperative Research, Nagoya Institute of Technology()
2nd Author's Name F. GOTO
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name E. ARAI
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1998/11/5
Paper # ED98-128,CPM98-131
Volume (vol) vol.98
Number (no) 385
Page pp.pp.-
#Pages 6
Date of Issue