| Presentation | 1998/11/5 Fabrication of InGaAs Quantum Wires by Surface-Diffusion-Controlled Molecular Beam Epitaxy Yasuhiko Tanuma, Takeyoshi Sugaya, Kenji Yonei, Tadashi Nakagawa, Mutsuo Ogura, Yoshinobu Sugiyama, Takashi Sekiguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaAs/InAlAs quantum wire structures on V-grooved InP substrates have been fabricated with As_2 flux and atomic hydrogen irradiation using molecular beam epitaxy. Under As_2 flux, the V-grooves are preserved during the InAlAs barrier layer growth due to a small migration of the In atoms, but the V-shape is not preserved and hence the quantum wires cannot be fabricated under an As_4 flux. The InGaAs quantum wires grown with atomic hydrogen have a narrow photoluminescence peak and a uniform cathode-luminescence image. These phenomena maybe caused by the absence of(311)A sidewall quantum wells due to re-evaporation of the group-III atoms by the atomic hydrogen irradiation. The field effect transistor with quantum wire channels demonstrated good saturation characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | molecular beam epitaxy(MBE) / InGaAs quantum wire / atomic hydrogen / selective growth / atomic hydrogen irradiation / surface diffusion control / FET |
| Paper # | ED98-126,CPM98-129 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of InGaAs Quantum Wires by Surface-Diffusion-Controlled Molecular Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | molecular beam epitaxy(MBE) |
| Keyword(2) | InGaAs quantum wire |
| Keyword(3) | atomic hydrogen |
| Keyword(4) | selective growth |
| Keyword(5) | atomic hydrogen irradiation |
| Keyword(6) | surface diffusion control |
| Keyword(7) | FET |
| 1st Author's Name | Yasuhiko Tanuma |
| 1st Author's Affiliation | Shibaura Institute of Technology() |
| 2nd Author's Name | Takeyoshi Sugaya |
| 2nd Author's Affiliation | Electrotechnical Laboratory |
| 3rd Author's Name | Kenji Yonei |
| 3rd Author's Affiliation | Shibaura Institute of Technology |
| 4th Author's Name | Tadashi Nakagawa |
| 4th Author's Affiliation | Electrotechnical Laboratory |
| 5th Author's Name | Mutsuo Ogura |
| 5th Author's Affiliation | Electrotechnical Laboratory |
| 6th Author's Name | Yoshinobu Sugiyama |
| 6th Author's Affiliation | Electrotechnical Laboratory |
| 7th Author's Name | Takashi Sekiguchi |
| 7th Author's Affiliation | Tohoku University |
| Date | 1998/11/5 |
| Paper # | ED98-126,CPM98-129 |
| Volume (vol) | vol.98 |
| Number (no) | 385 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |