Presentation 1998/11/5
Dependence of Surface Migration Induced Self-Limited Growth on the Shape of V-grooved Substrates
Xue-Lun Wang, Mutsuo Ogura, Hirofumi Matsuhata,
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Abstract(in English) V-grooved substrate shape dependence of the growth properties of surface migration induced self-limited growth was investigated by growing on substrates with various size parameters. It was found that the self-limiting behavior is essentially independent of V-groove period in the range of 2-7 μm and the width of the(001)mesa top facet. These results are considered as important information for the investigation of self-limiting mechanism and the structure design of devices using V-grooved quantum wires.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum wire / GaAs / self-limited / flow rate modulation epitaxy / shape of substrate
Paper # ED98-124,CPM98-127
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Committee CPM
Conference Date 1998/11/5(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dependence of Surface Migration Induced Self-Limited Growth on the Shape of V-grooved Substrates
Sub Title (in English)
Keyword(1) quantum wire
Keyword(2) GaAs
Keyword(3) self-limited
Keyword(4) flow rate modulation epitaxy
Keyword(5) shape of substrate
1st Author's Name Xue-Lun Wang
1st Author's Affiliation Electrotechnical Laboratory()
2nd Author's Name Mutsuo Ogura
2nd Author's Affiliation Electrotechnical Laboratory
3rd Author's Name Hirofumi Matsuhata
3rd Author's Affiliation Electrotechnical Laboratory
Date 1998/11/5
Paper # ED98-124,CPM98-127
Volume (vol) vol.98
Number (no) 385
Page pp.pp.-
#Pages 5
Date of Issue