| Presentation | 1998/10/29 Diffusion and reaction of V-N thin film as an interposed layer at the Cu/SiO_2 interface Masakazu SAKAGAMI, Mayumi B. TAKEYAMA, Atsushi NOYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The interposed V-N layer was employed at the Cu/SiO_2 interface to improve the poor adhesion of Cu to SiO_2 and Cu diffusion into SiO_2. the examined Cu.V-N/SiO_2/Si system was farely stable upon annealing at 850℃ for 1h reducing the pile-up of V at the Cu surface and the reaction at the SiO_2 surface which were observed when the V layer was used as a barrier. These phenomena were ascribed to the chemical stability of V-N compound and a fine structure of the prepared V-N layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu metallizatioh / interlayer / adhesion promoter / diffusion barrier / V-N thin film |
| Paper # | CPM98-119 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/10/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Diffusion and reaction of V-N thin film as an interposed layer at the Cu/SiO_2 interface |
| Sub Title (in English) | |
| Keyword(1) | Cu metallizatioh |
| Keyword(2) | interlayer |
| Keyword(3) | adhesion promoter |
| Keyword(4) | diffusion barrier |
| Keyword(5) | V-N thin film |
| 1st Author's Name | Masakazu SAKAGAMI |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Mayumi B. TAKEYAMA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 1998/10/29 |
| Paper # | CPM98-119 |
| Volume (vol) | vol.98 |
| Number (no) | 376 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |