Presentation 1998/10/29
Growth conditions of Al/HfN bilayered films with successive signle orientatin on (001) Si and (111) Si
Satoko Shinkai, Katsutaka Sasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) HfN films prepared on (001) Si and (111) Si under the optimum sputtering conditions using a UHV system grow in single-oriented states, respectively, and have about 27 μ Ωcm. It is expected that these HfN films are epitaxial growth films, because of the small mismatches between HfN and Si. In particular, if Al (111) plane with excellent EM resistance can be grown in a single-oriented state on HfN film, we expect that the reliability of Al metallization technology is improved. Therefore, the pole figures of HfN films deposited on Si were investigated by XRD analysis in order to confirm this. It is revealed that the HfN films are grown epitaxially with the relations of HfN (100) [110]//Si (001)[110] and HfN (111) [200]//Si (111) [200], respectively, and (111) Al film also grows in a single-oriented state on (111) HfN film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) epitaxial growth / single-oriented growth / XRD pole figure / low resistivity / EM resistance
Paper # CPM98-118
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Committee CPM
Conference Date 1998/10/29(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth conditions of Al/HfN bilayered films with successive signle orientatin on (001) Si and (111) Si
Sub Title (in English)
Keyword(1) epitaxial growth
Keyword(2) single-oriented growth
Keyword(3) XRD pole figure
Keyword(4) low resistivity
Keyword(5) EM resistance
1st Author's Name Satoko Shinkai
1st Author's Affiliation Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Katsutaka Sasaki
2nd Author's Affiliation Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
Date 1998/10/29
Paper # CPM98-118
Volume (vol) vol.98
Number (no) 376
Page pp.pp.-
#Pages 6
Date of Issue