Presentation 1998/10/29
ITO films deposition examine with low temperature by sputtering
R. Ohki, Y. Hoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) ITO thin films were deposited on acryl substrate by using a facing targets sputtering system. The films with a resistivity as low as 5×10^<-4>Ωcm were obtained by the sputtering, even if the sputtering voltage was higher than 500 V. An rf-dc coupled magnetron sputtering system was also used to deposit the film at a sputtering voltage below 100V. The resistivity of the film deposited by the magnetron sputtering decreased steeply as the sputtering voltage decreases from 300 V to 100 V, and the minimum resistivity was as low as 5×10^<-4>Ωcm. The smoothness of the film surface was also significantly improved by decreasing the sputtering voltage. These results indicate that the bombardment of high energy oxygen atoms to the film surface should be suppressed to obtain a film with low resisitivity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ITO film / rf-dc coupled magnetron sputtering / facing targets sputtering
Paper # CPM98-115
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Conference Information
Committee CPM
Conference Date 1998/10/29(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ITO films deposition examine with low temperature by sputtering
Sub Title (in English)
Keyword(1) ITO film
Keyword(2) rf-dc coupled magnetron sputtering
Keyword(3) facing targets sputtering
1st Author's Name R. Ohki
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics()
2nd Author's Name Y. Hoshi
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics
Date 1998/10/29
Paper # CPM98-115
Volume (vol) vol.98
Number (no) 376
Page pp.pp.-
#Pages 7
Date of Issue