| Presentation | 1994/9/13 A study of interfacial reactions in Cu/metal/SiO_2/Si systems Hikaru Seki, Mayumi Takeyama, Atsushi Noya, Katsutaka Sasaki, Wataru Matsushita, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The interfacial reactions taken place in the Cu, metal/SiO_2/Si systems(metal:Y,V,W)have been studied by the analytic techniques of AES and XPS.In the as-deposited specimen of the systems,the reduction of SiO_2 due to the oxidation of the metal deposited on the SiO_2 layer was observed according to ihe chemical affinity inherent in the metal.The interdiffusion and/or reaction at the interfaces in each system taken place due to the annealing,which lead to the deterioration of the systems by intermixing of elements at 250℃ for Cu/Y/SiO_2/Si,at 600℃ for Cu/V/SiO_2/Si and at 800℃ for Cu/W/SiO_2/Si system.The intermixing took place in loc al site for W barrier and in a uniform fashion for the others. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu metallization / metal/iO_2 interface / Cu/etal interface / reduction reaction / Pauling′s electronegativity / heat of forma tion |
| Paper # | CPM94-67 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1994/9/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study of interfacial reactions in Cu/metal/SiO_2/Si systems |
| Sub Title (in English) | |
| Keyword(1) | Cu metallization |
| Keyword(2) | metal/iO_2 interface |
| Keyword(3) | Cu/etal interface |
| Keyword(4) | reduction reaction |
| Keyword(5) | Pauling′s electronegativity |
| Keyword(6) | heat of forma tion |
| 1st Author's Name | Hikaru Seki |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology() |
| 2nd Author's Name | Mayumi Takeyama |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
| 3rd Author's Name | Atsushi Noya |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
| 4th Author's Name | Katsutaka Sasaki |
| 4th Author's Affiliation | Department of Material Science,Faculty of Engineering,Kitami Institute of Technology |
| 5th Author's Name | Wataru Matsushita |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
| Date | 1994/9/13 |
| Paper # | CPM94-67 |
| Volume (vol) | vol.94 |
| Number (no) | 227 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |