Presentation 1994/9/12
The first nucleation of metal-rich silicide in the interfacial reaction in Nb/Si systems
Taichi Nakanishi, Yoshitaka Murakami, Mayumi Takeyama, Atsushi Noya, Katsutaka Sasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The interfacial reaction in the Nb, Si system has been studied by x-ray diffraction(XRD)and Auger electron spectroscopy(AES).The metal-rich phase of Nb_3Si is formed as a first nucleated phase by the interfacial reaction in the systems at the heat treatment temperature of 550℃.Subsequently NbSi_3 in addition to Nb_3Si is f ormed after heat treatment at 600℃.The growth of the NbSi_2 phase by the out-diffusion of Si is observed at heat treatment temperatures above 650℃,and simultaneous occurrence of multiphases which consists of Nb_3Si,Nb_5Si_3 and NbSi_2 is observed at the heat treatment temperature of 650℃.The metalrich phase of Nb_3Si a nd Nb_5Si_3 are completely overcome by the formation of the NbSi_2 phase by the out-diffusion of Si at the heat treatment temperature of 700℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nb-silicide / interfacial reaction / first nucleated phase / multiphase / metal-rich phase / duffusing species
Paper # CPM94-64
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Committee CPM
Conference Date 1994/9/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The first nucleation of metal-rich silicide in the interfacial reaction in Nb/Si systems
Sub Title (in English)
Keyword(1) Nb-silicide
Keyword(2) interfacial reaction
Keyword(3) first nucleated phase
Keyword(4) multiphase
Keyword(5) metal-rich phase
Keyword(6) duffusing species
1st Author's Name Taichi Nakanishi
1st Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology()
2nd Author's Name Yoshitaka Murakami
2nd Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology
3rd Author's Name Mayumi Takeyama
3rd Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology
4th Author's Name Atsushi Noya
4th Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology
5th Author's Name Katsutaka Sasaki
5th Author's Affiliation Department of Material Science,Faculty of Engineering,Kitami Institute of Technology
Date 1994/9/12
Paper # CPM94-64
Volume (vol) vol.94
Number (no) 226
Page pp.pp.-
#Pages 6
Date of Issue