Presentation | 1994/9/12 Application of amorphous Cu-Zr alloy films Combined with Zr or Zr- N layers for the Contact system of Cu/Si Shinya Kagomi, Mayumi Takeyama, Atsushi Noya, Katsutaka Sasaki, Kouichirou Sakanshi, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The barrier properties of the amorphous Cu-Zr alloy film combined with Zr or Zr-N layer interposed between Cu and Si were examined by the depth profiling techniques using the Auger electron spectoscopy analysis.It is found that the Cu, Cu-Zr/Zr/Si and Cu/Cu-Zr/Zr-N/Si systems are stable up to the temperatures of 450℃ and 550℃ due to the annealing,respectively,although the form ation of Cu-Zr-Si temary alloy is the direction of the reaction taking place in these systems.The present amomhous alloy is found to be effective as a barrier for preventing the Cu diffusion in the contact system. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cu metallization technology / diffusion barrier / Cu-Zr amorphous alloy / metal-Semicondactor Contact / Cu-interconnect line |
Paper # | CPM94-63 |
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 1994/9/12(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Application of amorphous Cu-Zr alloy films Combined with Zr or Zr- N layers for the Contact system of Cu/Si |
Sub Title (in English) | |
Keyword(1) | Cu metallization technology |
Keyword(2) | diffusion barrier |
Keyword(3) | Cu-Zr amorphous alloy |
Keyword(4) | metal-Semicondactor Contact |
Keyword(5) | Cu-interconnect line |
1st Author's Name | Shinya Kagomi |
1st Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology() |
2nd Author's Name | Mayumi Takeyama |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
3rd Author's Name | Atsushi Noya |
3rd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
4th Author's Name | Katsutaka Sasaki |
4th Author's Affiliation | Department of Material Science,Faculty of Engineering,Kitami Institute of Technology |
5th Author's Name | Kouichirou Sakanshi |
5th Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology |
Date | 1994/9/12 |
Paper # | CPM94-63 |
Volume (vol) | vol.94 |
Number (no) | 226 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |