Presentation 1994/9/12
Auger electron spectroscopy study on the thermal stability of the Al/Al_3Ta/TaN/Si Contact system
Mayumi Takeyama, Atsushi Noya, Katsutaka Sasaki,
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Abstract(in English) The thermal stability of the Al, Al_3Ta/TaN/Si contact system,at which a chemical equilibrium state is realized at the contact interfaces between Al and TaN,has been studied by Auger electron spectroscopy(AES)analysis.It is shown that the Al_3Ta layer between the Al overlayer and the TaN barrier effectively suppresses the possible spontaneous reaction,and the system tolerates up to the annealing temperature of 600℃.It is found that the realization of the chemical equilibrium state at the interface is also effective in the case of using the A1_3Ta intermetallic compound as well as in the previous case of W- compound and this results in the realization of one of the most stable multilayered configurations among those of the Al metallization technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) metal-semiconductor interface / Al metallization / Al_3Ta intermetallic compound / chemical equilibrium state / TaN barrier
Paper # CPM94-62
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Committee CPM
Conference Date 1994/9/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Auger electron spectroscopy study on the thermal stability of the Al/Al_3Ta/TaN/Si Contact system
Sub Title (in English)
Keyword(1) metal-semiconductor interface
Keyword(2) Al metallization
Keyword(3) Al_3Ta intermetallic compound
Keyword(4) chemical equilibrium state
Keyword(5) TaN barrier
1st Author's Name Mayumi Takeyama
1st Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology()
2nd Author's Name Atsushi Noya
2nd Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Kitami Institute of Technology
3rd Author's Name Katsutaka Sasaki
3rd Author's Affiliation Department of Material Science,Faculty of Engineering,Kitami Institute of Technology
Date 1994/9/12
Paper # CPM94-62
Volume (vol) vol.94
Number (no) 226
Page pp.pp.-
#Pages 6
Date of Issue