Presentation 1994/9/12
Properties of InN thin films prepared by using an ECR plasma source
Yuichi Sato, Susumu Sato,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) InN thin films are prepared by reactive evaporation using an ECR plasma source.Properties of their films are measured and compared with those of InN films prepared by reactive evaporation using RF plasma.Substrate temperatures at which InN films having fine crystallinity are obtained are more or less higher than those of films prepared by RF plasma.However,surface morphologies of their films are relatively smooth.Deteriorations of surface morphologies and crystallinities of films prepared by ECR plasma are not observed even when their deposition rates are extremely low. Dependences of the film properties on the distance between the plasma source and substrates,and the diameter of orifices of the plasma source are also investigated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / ECR plasma / RF plasma / reactive evaporation / thin film
Paper # CPM94-59
Date of Issue

Conference Information
Committee CPM
Conference Date 1994/9/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Properties of InN thin films prepared by using an ECR plasma source
Sub Title (in English)
Keyword(1) InN
Keyword(2) ECR plasma
Keyword(3) RF plasma
Keyword(4) reactive evaporation
Keyword(5) thin film
1st Author's Name Yuichi Sato
1st Author's Affiliation Department of Electrical and Electronic Engineering,Mining College, Akita University()
2nd Author's Name Susumu Sato
2nd Author's Affiliation Department of Electrical and Electronic Engineering,Mining College, Akita University
Date 1994/9/12
Paper # CPM94-59
Volume (vol) vol.94
Number (no) 226
Page pp.pp.-
#Pages 6
Date of Issue