Presentation 1994/9/12
Preparation of boron films deposited by plasma CVD with boron chloride
Ichiro Ohtake, Takahiro Satoh, Miyako Ohkubo, Masato Nakao, Kiichi Kamimura, Yoshiharu Onuma,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Polycrystalline boron films were deposited by plasma assisted chemical vapor deposition.The source gas was boron chloride diluted with hydrogen.The structure of film was characterized by transmission electron beam diffraction.The ring pattern shows the films are polycrystalline α-boron.Absorption edge was about 1.4eV, and was independent on deposition temperature.The carrier density was of the order of 10^16>~10^18>cm^-3>.The Hall mobility was s everal cm^2, Vsec.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) α-rhombo hedral / boron film / plasma CVD / transmission electr on beem diffraction
Paper # CPM94-58
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Conference Information
Committee CPM
Conference Date 1994/9/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of boron films deposited by plasma CVD with boron chloride
Sub Title (in English)
Keyword(1) α-rhombo hedral
Keyword(2) boron film
Keyword(3) plasma CVD
Keyword(4) transmission electr on beem diffraction
1st Author's Name Ichiro Ohtake
1st Author's Affiliation Faculty of Engineering,Shinshu University()
2nd Author's Name Takahiro Satoh
2nd Author's Affiliation Faculty of Engineering,Shinshu University
3rd Author's Name Miyako Ohkubo
3rd Author's Affiliation Faculty of Engineering,Shinshu University
4th Author's Name Masato Nakao
4th Author's Affiliation Faculty of Engineering,Shinshu University
5th Author's Name Kiichi Kamimura
5th Author's Affiliation Faculty of Engineering,Shinshu University
6th Author's Name Yoshiharu Onuma
6th Author's Affiliation Faculty of Engineering,Shinshu University
Date 1994/9/12
Paper # CPM94-58
Volume (vol) vol.94
Number (no) 226
Page pp.pp.-
#Pages 5
Date of Issue