Presentation 1994/9/12
Preparation of CuInS_2 films by the reactive sputtering
Yasuyuki Kobayashi, Dan Yang Yu, Sarinanto M.M., Satoshi Kobayashi, Futao Kaneko, Takahiro Kawakami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) CuInS_2 thin films have been deposited on the glass substrates at 150 and 350℃ by the reactive sputtering method using CS_2 as re active gass.Nearly stoichiometric CuInS_2 films are obtained at about 0.02Pa of CS_2 partial pressure.The band gap is slightly lower than that of the single crystal.The resistivity tends to decrease with increasin atomic ratio Cu, In.
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Keyword(in English) sputtering / CuInS_2 / resistivity / X-rey diffraction / EPMA / transmission
Paper # CPM94-56
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Committee CPM
Conference Date 1994/9/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of CuInS_2 films by the reactive sputtering
Sub Title (in English)
Keyword(1) sputtering
Keyword(2) CuInS_2
Keyword(3) resistivity
Keyword(4) X-rey diffraction
Keyword(5) EPMA
Keyword(6) transmission
1st Author's Name Yasuyuki Kobayashi
1st Author's Affiliation Faculty of Engineering,Niigata University()
2nd Author's Name Dan Yang Yu
2nd Author's Affiliation Faculty of Engineering,Niigata University
3rd Author's Name Sarinanto M.M.
3rd Author's Affiliation Tokyo Institute of Technology
4th Author's Name Satoshi Kobayashi
4th Author's Affiliation Faculty of Engineering,Niigata University
5th Author's Name Futao Kaneko
5th Author's Affiliation Faculty of Engineering,Niigata University
6th Author's Name Takahiro Kawakami
6th Author's Affiliation Faculty of Engineering,Niigata University
Date 1994/9/12
Paper # CPM94-56
Volume (vol) vol.94
Number (no) 226
Page pp.pp.-
#Pages 6
Date of Issue