Presentation 1993/7/26
Hydrogen Sensors consisting of heterojunctions
Kentaro Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The Schottky barrier diode consisting of a Pd metal thin film deposited on such a semiconductor single crystal as n-type zinc oxide and silicon was able to respond to hydrogen even at room temperature.We developed a method to stabilize the sensitivity particularly in a hydrogen-sensitive Pd, Si O_x/Si diode.We also developed a hydrogen sensor which has an optical output signal, using a doublelayer structure which consists of the semitransparent Pd thin film deposited on a tungsten oxide film.A change in optical transmittance or reflectance of the structure is monitored.The sensor consisting of the tungsten oxide film containing water was able to detect hydrogen in about,ten seconds at room temperature.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hydrogen sensor / Schottky barrier / Pd thin film / semicoductors / tungsten oxide films
Paper # CPM93-35,OME93-21
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Committee CPM
Conference Date 1993/7/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hydrogen Sensors consisting of heterojunctions
Sub Title (in English)
Keyword(1) Hydrogen sensor
Keyword(2) Schottky barrier
Keyword(3) Pd thin film
Keyword(4) semicoductors
Keyword(5) tungsten oxide films
1st Author's Name Kentaro Ito
1st Author's Affiliation Department of Electrical and Electronic Engineering,Faculty of Engineering,Shinshu University()
Date 1993/7/26
Paper # CPM93-35,OME93-21
Volume (vol) vol.93
Number (no) 170
Page pp.pp.-
#Pages 6
Date of Issue