Presentation 1995/9/29
Effect of Ag doping on the epitaxial growth of ZnS
Takashi HASHIMOTO, Akihiko KOBAYASHI, Satoshi KOBAYASHI, Futao KANEKO, Kazuhisa WATANABE,
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Abstract(in English) ZnS thin films have been grown on Si(1OO) substrate by the vacuum evaporation method with two sources of Zn and S. In case of undoping, they are epitaxially grown at 32O℃ of substrate temperature. When Ag is doped at that substrate temperature, it is found that the Ag concentration roughly proportional with increasing AgCl source temperature and Ag distributes homogeneously in the film. The orientation and crystallinity estimated by the x-ray diffraction and RHEED get worse with increasing concentration of Ag.
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Keyword(in English) vacuum evaporation method / ZnS / epitaxial growth / x-ray diffraction / RHEED
Paper # CPM95-63
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Committee CPM
Conference Date 1995/9/29(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of Ag doping on the epitaxial growth of ZnS
Sub Title (in English)
Keyword(1) vacuum evaporation method
Keyword(2) ZnS
Keyword(3) epitaxial growth
Keyword(4) x-ray diffraction
Keyword(5) RHEED
1st Author's Name Takashi HASHIMOTO
1st Author's Affiliation Faculty of Engineering Niigata University()
2nd Author's Name Akihiko KOBAYASHI
2nd Author's Affiliation Faculty of Engineering Niigata University
3rd Author's Name Satoshi KOBAYASHI
3rd Author's Affiliation Faculty of Engineering Niigata University
4th Author's Name Futao KANEKO
4th Author's Affiliation Faculty of Engineering Niigata University
5th Author's Name Kazuhisa WATANABE
5th Author's Affiliation Niigata Sanyo Electronic Co., Ltd.
Date 1995/9/29
Paper # CPM95-63
Volume (vol) vol.95
Number (no) 283
Page pp.pp.-
#Pages 6
Date of Issue