Presentation 1995/7/7
Development of Insulated Gate Electrodes and Integrated Chemical Sensors
Yoshitaka Ito, Takaaki Ishikawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Conductor-insulator-semiconductor (CIS) structure can be two or three electric terminal devices in which there is a more recently surface photovoltage (SPV) chemical sensor. SPV sensor devices are made of different thicknesses of silicon layer with silicon wafers SOI (Silicon on Insulator) wafers and 0.6μm with SOS (Silicon on Sapphire) wafer. The peak values of an a.c. photocurrent using silicon and SOI wafers are obtained at the wavelength of around 1000nm. The SOS type SPV sensor illuminated by green laser having the wavelength 543.5 nm is superior to achieve a satisfactory position and sensitivity precision to to conventional SPV sensors made of si wafer, for large scale integrated chemical sensor system.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SPV sensor / chemical sensor / LAPS / gas sensor / ion sensor / integrated chemical sensor
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Conference Information
Committee CPM
Conference Date 1995/7/7(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Insulated Gate Electrodes and Integrated Chemical Sensors
Sub Title (in English)
Keyword(1) SPV sensor
Keyword(2) chemical sensor
Keyword(3) LAPS
Keyword(4) gas sensor
Keyword(5) ion sensor
Keyword(6) integrated chemical sensor
1st Author's Name Yoshitaka Ito
1st Author's Affiliation Research & Development Center, Shindengen Kogyo Co., LTD.()
2nd Author's Name Takaaki Ishikawa
2nd Author's Affiliation Research & Development Center, Shindengen Kogyo Co., LTD.
Date 1995/7/7
Paper #
Volume (vol) vol.95
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue