Presentation 1995/5/19
Characterization of ZnCdSe/ZnSe SQW Structures
Kenji Sasamoto, Takamasa Kato, Takashi Matsumoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) ZnSe/ZnCdSe/ZnSe single quantum well(SQW) structures were grown on GaAs(100) substrates by MBE. Lattice constants and layer thicknesses of well and barrier layers were determined from measured and simulated X-ray diffraction spectra. PL spectra were measured and discussed on the basis of the SQW stracture determined by X-ray diffraction.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum well / X-ray diffraction / PL / ZnCdSe / ZnSe
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Conference Information
Committee CPM
Conference Date 1995/5/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of ZnCdSe/ZnSe SQW Structures
Sub Title (in English)
Keyword(1) quantum well
Keyword(2) X-ray diffraction
Keyword(3) PL
Keyword(4) ZnCdSe
Keyword(5) ZnSe
1st Author's Name Kenji Sasamoto
1st Author's Affiliation Department of Electronic Engineering. Yamanashi University()
2nd Author's Name Takamasa Kato
2nd Author's Affiliation Department of Electronic Engineering. Yamanashi University
3rd Author's Name Takashi Matsumoto
3rd Author's Affiliation Department of Electronic Engineering. Yamanashi University
Date 1995/5/19
Paper #
Volume (vol) vol.95
Number (no) 40
Page pp.pp.-
#Pages 6
Date of Issue