Presentation 1995/5/19
Fabrication of CuInS_2 thin-film solar cells
Y. Ogawa, Y. Hashimoto, A. Jager-Waldau, K. Takeuchi, K. Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) High conversion efficiencies of up to 9.67% have been achieved using solar cells consisting of In_2O_3/CdS/CuInS_2 heterostructure. A Cu/In metallic precursor was annealed under H_2S atmosphere to form a CuInS_2 thin film. A KCN treatment, which removes leaky Cu_xS compound from Cu-excess CuInS_2 film, provides us with stoichiometric CuInS_2 films possessing excellent crystallinity and sufficiently low carrier concentration. A CdS buffer layer was formed from an iodide-containing chemical bath. The conduction band offset at this CdS/CuInS_2 interface is as small as 0.05eV, which is a suitable value for solar cells applications raising the open circuit voltage up to 717meV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thin-film solar cell / CuInS_2 / KCN treatment / sulfurization of metallic precursor / band alignment
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Committee CPM
Conference Date 1995/5/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of CuInS_2 thin-film solar cells
Sub Title (in English)
Keyword(1) thin-film solar cell
Keyword(2) CuInS_2
Keyword(3) KCN treatment
Keyword(4) sulfurization of metallic precursor
Keyword(5) band alignment
1st Author's Name Y. Ogawa
1st Author's Affiliation Department of electrical and electronic engineering faculty of engineering Shinshu University()
2nd Author's Name Y. Hashimoto
2nd Author's Affiliation Department of electrical and electronic engineering faculty of engineering Shinshu University
3rd Author's Name A. Jager-Waldau
3rd Author's Affiliation Universitat Konstanz
4th Author's Name K. Takeuchi
4th Author's Affiliation Department of electrical and electronic engineering faculty of engineering Shinshu University
5th Author's Name K. Ito
5th Author's Affiliation Department of electrical and electronic engineering faculty of engineering Shinshu University
Date 1995/5/19
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Volume (vol) vol.95
Number (no) 40
Page pp.pp.-
#Pages 6
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