Presentation 1995/10/20
Tick film metallizaition technique for Aluminium Nitride
Masuhiro Natsuhara, Hirohiko Nakata,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) As semiconductor device grow in size and power consumption thermal stress and heat dissipation are becoming serious probrems. Aluminium nitride, with its low thermal expansion ratio and high thermal conductivity, is attracting attention as a possible solution to these problems, and practical applications are being studied. Meanwhile, as semiconductor integration density increases, so does substrate wiring density. Though expensive, thin-film metallization has been the only solutoin to the problem of high-density wiring. Now, however, new soldering and printing techniques allow thick-film technology to be applied to fine patterns with line widths and line spacing as low as 75μm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) aluminium nitride / thich film matallization / high thermal conductivity / fine pattern / printing techniques / low thermal expansion ratio
Paper # CPM95-80
Date of Issue

Conference Information
Committee CPM
Conference Date 1995/10/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Tick film metallizaition technique for Aluminium Nitride
Sub Title (in English)
Keyword(1) aluminium nitride
Keyword(2) thich film matallization
Keyword(3) high thermal conductivity
Keyword(4) fine pattern
Keyword(5) printing techniques
Keyword(6) low thermal expansion ratio
1st Author's Name Masuhiro Natsuhara
1st Author's Affiliation Sumitomo Electric Industries LTD()
2nd Author's Name Hirohiko Nakata
2nd Author's Affiliation Sumitomo Electric Industries LTD
Date 1995/10/20
Paper # CPM95-80
Volume (vol) vol.95
Number (no) 332
Page pp.pp.-
#Pages 5
Date of Issue