| Presentation | 1996/8/20 Structural Dependence of Coupling Tolerance for Waveguide Photodiodes K. Nishikata, K. Hiraiwa, H. Shimizu, N. Iwai, N. Yamanaka, A. Kasukawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Long-Wavelength PIN waveguide photodiodes (PDs) are promising because they have some features, for example, easy integration to optical bidirectional modules, high speed, and easy monolithic integration with another devices. In this work, we studied the dependence of sensitivity, coupling tolerance, and dark current on epitaxial-film structures and materials. The waveguide photodiodes with a 3 μm thick absorption layer of GaInAsP (1.4μm) had a sensitivity as high as 0.96A/W and a 0.5dB tolerance as large as ±2.3μm. In the case of the PDs with a 0.4μm thick A1GaInAs absorption layer, the dark current was as low as 20pA at the reverse bias voltage of 3V. The waveguide photodiode which has such excellent characteristics is an alternative of a conventional surface-illuminated PD. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Bidirectional module / PIN waveguide photodiode / Coupling tolerance / Dark current |
| Paper # | EDM-96-31,CPM-96-54,OPE-96-53,LQE-96-55 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1996/8/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural Dependence of Coupling Tolerance for Waveguide Photodiodes |
| Sub Title (in English) | |
| Keyword(1) | Bidirectional module |
| Keyword(2) | PIN waveguide photodiode |
| Keyword(3) | Coupling tolerance |
| Keyword(4) | Dark current |
| 1st Author's Name | K. Nishikata |
| 1st Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.() |
| 2nd Author's Name | K. Hiraiwa |
| 2nd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 3rd Author's Name | H. Shimizu |
| 3rd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 4th Author's Name | N. Iwai |
| 4th Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 5th Author's Name | N. Yamanaka |
| 5th Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 6th Author's Name | A. Kasukawa |
| 6th Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| Date | 1996/8/20 |
| Paper # | EDM-96-31,CPM-96-54,OPE-96-53,LQE-96-55 |
| Volume (vol) | vol.96 |
| Number (no) | 218 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |