Presentation 1996/12/12
Self-Aligned Passivation Technology for On-Chip Copper Interconnection
Nobuyoshi Awaya, Toshio Kobayashi,
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Abstract(in English) Self-aligned passivation procedure for on chip copper interconnection has been developed to improve oxidation resistance. Al-Cu inter metallic compound was formed on copper wire by the annealing at 350C. The unreacted aluminum on SiO2 was selectively removed by a phosphoric acid treatment. Additional annealing in the gaseous mixture of H2 and O2 improved oxidation resistance of the passivation alloy. The increase in the resistance of the passivated copper wire pattern was also about 5%. The adhesion strength of plasma CVD SiO_2 on the copper was also improved by this method.
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Keyword(in English) Integrated circuit / LSI / Interconnection / copper / alloy / Aluminum
Paper # CPM96-114
Date of Issue

Conference Information
Committee CPM
Conference Date 1996/12/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Self-Aligned Passivation Technology for On-Chip Copper Interconnection
Sub Title (in English)
Keyword(1) Integrated circuit
Keyword(2) LSI
Keyword(3) Interconnection
Keyword(4) copper
Keyword(5) alloy
Keyword(6) Aluminum
1st Author's Name Nobuyoshi Awaya
1st Author's Affiliation NTT System Electronics Laboratories()
2nd Author's Name Toshio Kobayashi
2nd Author's Affiliation NTT System Electronics Laboratories
Date 1996/12/12
Paper # CPM96-114
Volume (vol) vol.96
Number (no) 413
Page pp.pp.-
#Pages 7
Date of Issue