Presentation 1996/11/8
Preparation of Ba-Ferrite Thin Films by Post-annealing of The Film Deposited by Means of Alternate S Layer and R Layer Deposition Method
H. Shimizu, H. Shinozaki, I. Uehara, S. Kon, Y. Hoshi, K. Kato, F. Kaneko, H. Ikawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this study, formation of hexagonal barium ferrite (BaM) thin films were attempted by post annealing of the films with a layered structure. The sample film was prepared as follows: Fe_3O_4 layer of 4.6Å thick and BaO・3Fe_2O_3 layer of 6.9Å thick were deposited 100 times on ZnO coated and non-coated thermally oxidized silicon wafer substrate at various temperatures. Annealing was performed at a temperature in the range from 600℃ to 800℃. The crystallization temperature of the film increased from 700℃ to 800℃ as the deposition temperature increase from 25℃ to 400℃. Orientation of crystallites in the film also depended on the deposition temperature and the BaM film with c-axis orientated texture was obtained by annealing the film deposited at 200℃. The orientation of the film however, depended little on the ZnO underlayer, although the film deposited on ZnO underlayer had a much higher coercive force than the film deposited on thermally oxidized silicon wafer substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) barium ferrite / ZnO underlayer / substrate temperature / alternate deposition / orientation c-axis
Paper # CPM96-113
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Conference Information
Committee CPM
Conference Date 1996/11/8(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of Ba-Ferrite Thin Films by Post-annealing of The Film Deposited by Means of Alternate S Layer and R Layer Deposition Method
Sub Title (in English)
Keyword(1) barium ferrite
Keyword(2) ZnO underlayer
Keyword(3) substrate temperature
Keyword(4) alternate deposition
Keyword(5) orientation c-axis
1st Author's Name H. Shimizu
1st Author's Affiliation Niigata University()
2nd Author's Name H. Shinozaki
2nd Author's Affiliation Tokyo Institute of Polytechnics
3rd Author's Name I. Uehara
3rd Author's Affiliation Tokyo Institute of Polytechnics
4th Author's Name S. Kon
4th Author's Affiliation Tokyo Institute of Polytechnics
5th Author's Name Y. Hoshi
5th Author's Affiliation Tokyo Institute of Polytechnics
6th Author's Name K. Kato
6th Author's Affiliation Niigata University
7th Author's Name F. Kaneko
7th Author's Affiliation Niigata University
8th Author's Name H. Ikawa
8th Author's Affiliation Kanagawa Institute of Technology
Date 1996/11/8
Paper # CPM96-113
Volume (vol) vol.96
Number (no) 350
Page pp.pp.-
#Pages 6
Date of Issue