| Presentation | 1996/11/8 Barrier properties of W-nitride in the Cu/W-nitride/Si contact system Mayumi TAKEYAMA, Atsushi NOYA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have prepared the WN_x thin films with various composition by reactive sputtering, and also investigated their characterizations and the thermal stability of the Cu/WN_x/Si contact system using the obtained WN_x films. The results indicate that the W_<65>N_<35> barrier consisting of W_2N phase with the (111) preferred orientation shows the excellent barrier properties for Cu metallization. The obtained Cu/W_<65>N_<35>/Si contact system is fairly stable up to the annealing temperature at 800℃ or above. This is probably because the excellent properties of the W_2N film, such as impurity free, good crystallinity, and scarce change in structure due to annealing, lead to the thermal stability of the contact system. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu metallization / preferential orientation / thermal stability / nitride / diffusion barrier |
| Paper # | CPM96-107 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 1996/11/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Barrier properties of W-nitride in the Cu/W-nitride/Si contact system |
| Sub Title (in English) | |
| Keyword(1) | Cu metallization |
| Keyword(2) | preferential orientation |
| Keyword(3) | thermal stability |
| Keyword(4) | nitride |
| Keyword(5) | diffusion barrier |
| 1st Author's Name | Mayumi TAKEYAMA |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Atsushi NOYA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 1996/11/8 |
| Paper # | CPM96-107 |
| Volume (vol) | vol.96 |
| Number (no) | 350 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |