Presentation | 1996/11/8 Barrier properties of W-nitride in the Cu/W-nitride/Si contact system Mayumi TAKEYAMA, Atsushi NOYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have prepared the WN_x thin films with various composition by reactive sputtering, and also investigated their characterizations and the thermal stability of the Cu/WN_x/Si contact system using the obtained WN_x films. The results indicate that the W_<65>N_<35> barrier consisting of W_2N phase with the (111) preferred orientation shows the excellent barrier properties for Cu metallization. The obtained Cu/W_<65>N_<35>/Si contact system is fairly stable up to the annealing temperature at 800℃ or above. This is probably because the excellent properties of the W_2N film, such as impurity free, good crystallinity, and scarce change in structure due to annealing, lead to the thermal stability of the contact system. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cu metallization / preferential orientation / thermal stability / nitride / diffusion barrier |
Paper # | CPM96-107 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1996/11/8(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Barrier properties of W-nitride in the Cu/W-nitride/Si contact system |
Sub Title (in English) | |
Keyword(1) | Cu metallization |
Keyword(2) | preferential orientation |
Keyword(3) | thermal stability |
Keyword(4) | nitride |
Keyword(5) | diffusion barrier |
1st Author's Name | Mayumi TAKEYAMA |
1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
2nd Author's Name | Atsushi NOYA |
2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
Date | 1996/11/8 |
Paper # | CPM96-107 |
Volume (vol) | vol.96 |
Number (no) | 350 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |