| Presentation | 1996/10/25 The effect of the ZrN diffusion barrier prepared at low temperature in Cu metallization Mayumi TAKAYAMA, Atsushi NOYA, Kouichirou SAKANISHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have examined the application of the ZrN barrier layer prepared at rather low temperature with low electrical resistivity to Cu metallization, in order to realize the diffusion barrier which satisfies the high thermal stability of the contact system as well as sufficiently low electrical resistivity. The obtained contact system indicates the subsequent growth of ZrN(100) and Cu(110) preferred orientations on the Si(100) substrate. The Cu/ZrN/Si contact system tolerates annealing even at 750℃ for 1 h without any interdiffusion and/or reaction at either the interface of Cu/ZrN or ZrN/Si. It is revealed that the ZrN layer with low electrical resistivity and high performance as a diffusion barrier is one of the ultimate materials for use in future ultra-large scale integration technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu metallization / diffusion barrier / grainboundary / nitride / thermal stability |
| Paper # | CPM96-94 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1996/10/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The effect of the ZrN diffusion barrier prepared at low temperature in Cu metallization |
| Sub Title (in English) | |
| Keyword(1) | Cu metallization |
| Keyword(2) | diffusion barrier |
| Keyword(3) | grainboundary |
| Keyword(4) | nitride |
| Keyword(5) | thermal stability |
| 1st Author's Name | Mayumi TAKAYAMA |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Atsushi NOYA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Kouichirou SAKANISHI |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 1996/10/25 |
| Paper # | CPM96-94 |
| Volume (vol) | vol.96 |
| Number (no) | 329 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |