| Presentation | 1996/10/25 The thermal stability of the Cu(111)/W(110)/Si(100) contact system using the W diffusion barrier with preferred orientation Mayumi TAKEYAMA, Atsushi NOYA, Tomoyuki FUKUDA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have examined the thermal stability of the Cu/W/Si contact system using the W barrier with a (110) preferred orientation. The result indicates that the growth of W(110) with preferred orientation on the Si(100) substrate and subsequent growth of Cu(111) layer on them are observed. The application of the W barrier with preferred orientation successfully suppresses the grainboundary diffusion of Si as well as the fast diffusion of Cu through the barrier due to annealing. In this contact system, as a result an absence of Cu diffusion and the raised silicidation temperatures above 670℃ are noticiable. The contact system is fairly stable until the silicidation reaction consumes the W barrier. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu metallization / preferred orientation / thermal stability / silicidation reaction / diffusion barrier |
| Paper # | CPM96-93 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 1996/10/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The thermal stability of the Cu(111)/W(110)/Si(100) contact system using the W diffusion barrier with preferred orientation |
| Sub Title (in English) | |
| Keyword(1) | Cu metallization |
| Keyword(2) | preferred orientation |
| Keyword(3) | thermal stability |
| Keyword(4) | silicidation reaction |
| Keyword(5) | diffusion barrier |
| 1st Author's Name | Mayumi TAKEYAMA |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Atsushi NOYA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Tomoyuki FUKUDA |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
| Date | 1996/10/25 |
| Paper # | CPM96-93 |
| Volume (vol) | vol.96 |
| Number (no) | 329 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |