Presentation 1996/10/25
Characterization of Semiconductor Photonic Devices Using Near-field Optical Microscope
Toshiharu Saiki, Motoichi Ohtsu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel-structured semiconductor photonic device is investigated using a near-field scanning optical microscope. Employing optimized fiber tips for high transmission and collection efficiency, multi-diagnostics of lateral p-n junctions are performed with the AFM operation. Measuring the spatially resolved photoluminescence spectra, we precisely examine the carrier distribution in the transition region of the p-n junctions. Electroluminescence imaging reveals the width and the position of the active region. The slant angle of the p-n interface is determined by applying the multiwavelength near-field photocurrent measurement. We also clarify the mechanism of the mode conversion due to the interaction between the evanescent light on a small aperture and optically dense semiconductors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Near-field optics / Fiber probe / Spatially resolved spectroscopy / P-N junction / Evanescent light
Paper # CPM96-90
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Conference Information
Committee CPM
Conference Date 1996/10/25(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of Semiconductor Photonic Devices Using Near-field Optical Microscope
Sub Title (in English)
Keyword(1) Near-field optics
Keyword(2) Fiber probe
Keyword(3) Spatially resolved spectroscopy
Keyword(4) P-N junction
Keyword(5) Evanescent light
1st Author's Name Toshiharu Saiki
1st Author's Affiliation Kanagawa Academy of Science and Technology()
2nd Author's Name Motoichi Ohtsu
2nd Author's Affiliation Kanagawa Academy of Science and Technology
Date 1996/10/25
Paper # CPM96-90
Volume (vol) vol.96
Number (no) 329
Page pp.pp.-
#Pages 6
Date of Issue